| PART |
Description |
Maker |
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| HI3-0201HS4 HI3-0201HS5 HI1-0201HS2 HI1-0201HS5 HI |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0414-4 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| LMA183 |
2-18 GHz MESFET Amplifier
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| NEZ1011-3E NEZ1414-3E |
N-CHANNEL GaAs MESFET
|
NEC
|
| 2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC]
NEC Corp.
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| CRF24060D |
60 W SiC RF Power MESFET Die
|
Cree, Inc.
|
| NE-720 |
General Purpose GaAs MESFET
|
NEC
General Purpose GaAs MESFET
|
| NEZ1011-4E NEZ1414-4E |
4W X, Ku-BAND POWER GaAs MESFET
|
NEC
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
